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| AIGaAs PIN Diode High Isolation SPST Switch V 1.00 MA4AGSW900-287T Features n n n n SOT-23 Package Outline (Topview) GND 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz Description M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST PIN Diode Switch that makes use of Series Diodes featuring Lower Loss, Higher Isolation and Faster Switching Speed. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The switch die is fully passivated with silicon nitride and has an additional layer of a polymer for scratch and impact protection. This protective polymer coating provides additional moisture protection to the SOT-23 assembly. J1 J2 Absolute Maximum Ratings1 Parameter Operating Temperature Storage Temperature Dissipated RF & DC Power Incident RF Power Mounting Temperature Value -65 C to +125 C -65 C to +150 C 50 mW +20 dBm C.W. +235 C for 10 seconds Applications The small 20 fF capacitance, and the low 3.0 " ON " resistance of the GaAs PIN diodes allow for higher isolation at zero volt bias and lower insertion loss vs. comparable SPST switches. This switch is designed for use in applications requiring improved RF performance, simple D.C. Bias, and small device size. 1. Exceeding any of these values may result in permanent damage Electrical Specifications @ TA = 25 C Parameter and Test Conditions 0.5 GHz to 3.0 GHz Frequency Range Insertion Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz Isolation @ 0 Volts @ 3 GHz Input / Output Return Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz Switching Speed (10 to 90% RF Voltage) 1 Units Minimum Value dB dB dB nS 30 - Typical Value 0.8 33.0 13.0 10.0 Maximum Value 1.3 - NOTES: 1. Pin Labeled J1 is the Diode's Anode 2. Pin Labeled J2 is the Diode's Cathode 3. Pin Labeled GND must be connected to RF & DC Ground 1. Switching speed is measured using a TTL Controlled , +/- 5 V PIN Diode Driver. Driver delay is not included. AIGaAs PIN Diode High Isolation SPST Switch Typical RF Performance MA4AGSW900-287 Insertion Loss vs DC Bias 0.00 MA4AGSW900-287T V 1.00 -0.20 -0.40 -0.60 -0.80 -1.00 -1.20 -1.40 -1.60 -1.80 Bias = 3 mA Bias = 5 mA Bias = 10 mA Bias = 30 mA -2.00 500 1000 1500 Frequency ( GHz ) 2000 2500 3000 MA4AGSW900-287 Return Loss vs D.C. Bias 0.0 -5.0 -10.0 Bias = 3 mA Bias = 5 mA Bias = 10 mA Bias = 30 mA -15.0 -20.0 -25.0 500 1000 1500 Frequency ( GHz ) 2000 2500 3000 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch Typical RF Performance MA4AGSW900-287 Isolation at 0V D.C. Bias 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 500 1000 1500 2000 MA4AGSW900-287T V 1.00 Bias = 0V 2500 3000 Frequency ( GHz ) 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch Mounting Information MA4AGSW900-287T V 1.00 The illustration indicates the recommended mounting pad configuration for the SOT-23package. Solder paste containing flux should be screened onto the pads to a thickness of 0.005- 0.007 inches. The plastic package device is placed in position, firmly adhering to the solder past. Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed +275 C and the body temperature does not exceed +250 C. SOT-23 Circuit Layout .030 min. 0.80 .035 min. 0.90 .037 0.95 0.75 1.9 .090 2.2 Dimenstions: inches mm SOT-23 Case Style 287 SOT-23 (Case Style 287) Inches Millimeters Dim F D A N A B C D E M G B K Min. 0.013 0.003 0.110 0.047 Max. 0.048 0.008 0.040 0.020 0.006 0.119 0.056 Min. 0.35 0.08 2.80 1.20 Max. 1.22 0.20 1.00 0.50 0.15 3.00 1.40 F G H 0.037 typical 0.075 typical 0.103 0.024 0.95 typical 1.90 typical 2.60 0.60 L H J C E J K L Dim M N Min. 10 max.1 2 ... 30 Note: 1. Applicable on all sides 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch MA4AGSW900-287T V 1.00 Static Sensitivity Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Operation of the MA4AGSW900-287T SPST Switch Successful operation of the SPST Switch is accomplished by connecting J1 ( PIN 1 ) to a RF Bias Network , J2 ( PIN 2 ) to a DC Return Network , and SOT-23 Ground ( PIN 3 ) to Circuit RF and D.C. Ground. Approximately + 3.0 V @ + 5 mA will create the Insertion Loss State, and 0 V will produce the Isolation State. The Isolation value is improved slightly by applying -3 V D.C. Bias. The SPST switch can be driven from a simple + 5 V TTL Gate Driver. SPST Schematic D.C. Bias GND PIN 3 GND GND RF Input RF Output PIN1 (J1) PIN2 (J2) MA4AGSW900-287 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 |
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